ABSTRACT

We have demonstrated the rectifying properties of metal/organic junction diodes based on a simple porphyrin and its diprotonated version. Meso-tetraphenylporphyrin (H2TPP) and its diprotonated version were spin-coated separately on the surface of copper (Cu) to produce thin films. Current-voltage characteristics revealed that rectifying capacity of Cu/H2TPP junction is poor. However, metal/organic junction diode in the thin film of the diprotonated form of H2TPP exhibited excellent rectification upon structural modification induced by protonation of the two nitrogens in the porphyrin core