ABSTRACT

Low power and space consumption are two essential criteria for future non – volatile memory technology. Among other emerging memory technologies resistive memory becomes very promising and efficient one because it fulfils all criteria for sustainable memory technology. In this work we have investigated the resistive switching characteristics in FTO/TiOx/Metal structure. The device shows low power switching characteristics at ±2V with current of 2.7 μA. The device shows unique properties of bipolar resistive switching. The high resistance ratio of >102 and uniform switching cycles are another potential factors of this structure. We have also investigated the current conduction mechanism for the HRS and LRS of our device during SET and RESET processes.